GaN (Gallium Nitride)
It is also expected to be a next-generation power semiconductor device.
This is an introduction to "GaN (Gallium Nitride)," the main product of Shinyo Corporation. Compared to silicon, it has a bandgap that is about three times wider (3.42 eV) and an insulation breakdown voltage that is about ten times higher (3.0 MV/cm). When the on-resistance is reduced to the same level as silicon at 10 mΩ·cm², the withstand voltage reaches 1600 V. Additionally, it can generate relatively short wavelengths of light, such as blue and green, and is used in various optical devices, making it a promising candidate for next-generation power semiconductor devices alongside SiC. 【Features】 ■ Bandgap is about three times wider compared to silicon ■ Insulation breakdown voltage is about ten times higher ■ Withstand voltage of 1600 V ■ Capable of generating relatively short wavelengths of light, such as blue and green ■ Used in various optical devices *For more details, please refer to the PDF materials or feel free to contact us.
- Company：新陽
- Price：Other
